검색결과 : 10건
No. | Article |
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1 |
Properties and growth peculiarities of Si0.30Ge0.70 stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors Hikavyy A, Rosseel E, Kubicek S, Mannaert G, Favia P, Bender H, Loo R, Horiguchi N Thin Solid Films, 602, 72, 2016 |
2 |
Chemical vapor deposition of Si:C and Si:C:P films-Evaluation of material quality as a function of C content, carrier gas and doping Dhayalan SK, Loo R, Hikavyy A, Rosseel E, Bender H, Richard O, Vandervorst W Journal of Crystal Growth, 426, 75, 2015 |
3 |
Integration aspects of strained Ge pFETs Witters L, Eneman G, Mitard J, Vincent B, Hikavyy A, Milenin AP, Mertens S, Thean A, Collaert N Solid-State Electronics, 98, 7, 2014 |
4 |
Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs Vandooren A, Leonelli D, Rooyackers R, Hikavyy A, Devriendt K, Demand M, Loo R, Groeseneken G, Huyghebaert C Solid-State Electronics, 83, 50, 2013 |
5 |
Growth of high Ge content SiGe on (110) oriented Si wafers Hikavyy A, Vanherle W, Vincent B, Dekoster J, Bender H, Moussa A, Witters L, Hoffman T, Loo R Thin Solid Films, 520(8), 3179, 2012 |
6 |
The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Schulze A, Vandervorst W, Loo R, Heyns M, Meuris M, Hoffmann T, De Meyer K Thin Solid Films, 520(8), 3326, 2012 |
7 |
Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth Collaert N, Rooyackers R, Hikavyy A, Dixit A, Leys F, Verheyen P, Loo R, Jurczak M, Biesemans S Thin Solid Films, 517(1), 101, 2008 |
8 |
pMOS transistor with embedded SiGe: Elastic and plastic relaxation issues Hikavyy A, Bhouri N, Loo R, Verheyen P, Clemente F, Hopkins J, Trussell R, Caymax M Thin Solid Films, 517(1), 113, 2008 |
9 |
Low temperature epitaxy and the importance of moisture control Leys FE, Hikavyy A, Machkaoutsan V, De Vos B, Geenen L, Van Daele B, Loo R, Caymax M Thin Solid Films, 517(1), 416, 2008 |
10 |
Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide Stuyven G, De Visschere P, Hikavyy A, Neyts K Journal of Crystal Growth, 234(4), 690, 2002 |