검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface Chen DB, Wan LJ, Li J, Liu ZK, Li GQ Solid-State Electronics, 151, 60, 2019 |
| 2 |
Device behaviour and zero temperature coefficients analysis for microwave GaAs HEMT Alim MA, Rezazadeh AA Solid-State Electronics, 147, 13, 2018 |
| 3 |
Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate Zhang ZL, Song L, Li WY, Fu K, Yu GH, Zhang XD, Fan YM, Deng XG, Li SM, Sun SC, Li XJ, Yuan J, Sun Q, Dong ZH, Cai Y, Zhang BS Solid-State Electronics, 134, 39, 2017 |
| 4 |
The causes of GaN HEMT bell-shaped transconductance degradation Chen CH, Sadler R, Wang DV, Hou D, Yang YF, Yau W, Sutton W, Shim J, Wang SG, Duong A Solid-State Electronics, 126, 115, 2016 |
| 5 |
A novel method for measuring parasitic resistance in high electron mobility transistors Yang Z, Wang JY, Li XP, Zhang B, Zhao J, Xu Z, Wang MJ, Yu M, Yang ZC, Wu WG, Zhang YM, Zhang JC, Ma XH, Hao Y Solid-State Electronics, 100, 27, 2014 |
| 6 |
True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications Moschetti G, Abbasi M, Nilsson PA, Hallen A, Desplanque L, Wallart X, Grahn J Solid-State Electronics, 79, 268, 2013 |
| 7 |
DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation Moschetti G, Lefebvre E, Fagerlind M, Nilsson PA, Desplanque L, Wallart X, Grahn J Solid-State Electronics, 87, 85, 2013 |
| 8 |
Analysis and optimisation of ohmic contact resistance and surface morphology of a Ta-based diffusion barrier layer in AlGaN/GaN HEMTs on Si (111) substrates Cho SJ, Wang C, Kim NY Solid-State Electronics, 89, 85, 2013 |
| 9 |
Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation Alexewicz A, Alomari M, Maier D, Behmenburg H, Giesen C, Heuken M, Pogany D, Kohn E, Strasser G Solid-State Electronics, 89, 207, 2013 |
| 10 |
Time-dependent device characteristics in InAs/AlSb HEMTs Ho HC, Liu HK, He WZ, Lin HK, Hsin YM Solid-State Electronics, 73, 51, 2012 |