검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Synthesis, microstructural characterization, and mechanical property evaluation of vacuum plasma sprayed tantalum carbide Balani K, Gonzalez G, Agarwal A, Hickman R, O'Dell JS, Seal S Journal of the American Ceramic Society, 89(4), 1419, 2006 |
| 2 |
Gianfranco G. L. Rinaldi (1942-2000) - Memorial Stern G, Rinaldi J, Rinaldi R, Hickman R AAPG Bulletin, 87(8), 1390, 2003 |
| 3 |
Cl-2/Ar high-density-plasma damage in GaN Schottky diodes Zhang AP, Dang G, Ren F, Cao XA, Cho H, Lambers ES, Pearton SJ, Shul RJ, Zhang L, Baca AG, Hickman R, Van Hove JM Journal of the Electrochemical Society, 147(2), 719, 2000 |
| 4 |
Poly(3,4-alkylenedioxypyrrole)s: Highly stable electronically conducting and electrochromic polymers Schottland P, Zong K, Gaupp CL, Thompson BC, Thomas CA, Giurgiu I, Hickman R, Abboud KA, Reynolds JR Macromolecules, 33(19), 7051, 2000 |
| 5 |
GaN/AlGaN HBT fabrication Ren F, Han J, Hickman R, Van Hove JM, Chow PP, Klaassen JJ, LaRoche JR, Jung KB, Cho H, Cao XA, Donovan SM, Kopf RF, Wilson RG, Baca AG, Shul RJ, Zhang L, Willison CG, Abernathy CR, Pearton SJ Solid-State Electronics, 44(2), 239, 2000 |
| 6 |
GaNPN junction issues and developments Hickman R, Van Hove JM, Chow PP, Klaassen JJ, Wowchak AM, Polley CJ, King DJ, Ren F, Abernathy CR, Pearton SJ, Jung KB, Cho H, La Roche JR Solid-State Electronics, 44(2), 377, 2000 |
| 7 |
Effect of thermal stability of GaN epi-layer on the Schottky diodes Lee KN, Cao XA, Abernathy CR, Pearton SJ, Zhang AP, Ren F, Hickman R, Van Hove JM Solid-State Electronics, 44(7), 1203, 2000 |
| 8 |
Inductively coupled plasma damage in GaN Schottky diodes Cao XA, Zhang AP, Dang GT, Cho H, Ren F, Pearton SJ, Shul RJ, Zhang L, Hickman R, Van Hove JM Journal of Vacuum Science & Technology B, 17(4), 1540, 1999 |
| 9 |
Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence Van Hove JM, Chow PP, Wowchak AM, Klaassen JJ, Hickman R, Polley C Journal of Vacuum Science & Technology B, 16(3), 1286, 1998 |