화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
Rodrigues M, Galeti M, Martino JA, Collaert N, Simoen E, Claeys C
Solid-State Electronics, 62(1), 146, 2011
2 Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs
Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C
Solid-State Electronics, 54(12), 1592, 2010