| 1 |
Study of reactions between HfO2 and Si in thin films with precise identification of chemical states by XPS
Wang H, Wu P, Li XF, Chen S, Zhang SP, Song BB
Applied Surface Science, 257(8), 3440, 2011 |
| 2 |
Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy
Yang XM, Yu T, Wu XM, Zhuge LJ, Ge SB, He JJ
Applied Surface Science, 257(22), 9277, 2011 |
| 3 |
Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
Rodrigues M, Galeti M, Martino JA, Collaert N, Simoen E, Claeys C
Solid-State Electronics, 62(1), 146, 2011 |
| 4 |
Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs
Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C
Solid-State Electronics, 54(12), 1592, 2010 |
| 5 |
SIMS analysis of HfSiO(N) thin films
Miwa S, Kusanagi S, Kobayashi H
Applied Surface Science, 252(19), 7176, 2006 |
| 6 |
Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications
Cheng XH, Song ZR, Jiang J, Yu YH, Yang WW, Shen DS
Applied Surface Science, 252(23), 8073, 2006 |
