검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N-2 plasmas Lee YB, Oh IK, Cho EN, Moon P, Kim H, Yun I Applied Surface Science, 349, 757, 2015 |
| 2 |
Low inversion equivalent oxide thickness and enhanced mobility in MOSFETs with chlorine plasma interface engineering Li CC, Chang-Liao KS, Chen LT, Fu CH, Hong HZ, Li MC, Chi WF, Lu CC, Ye ZH, Wang TK Solid-State Electronics, 101, 33, 2014 |
| 3 |
Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics Song ZR, Cheng XH, Zhang EX, Xing YM, Yu YH, Zhang ZX, Wang X, Shen DS Thin Solid Films, 517(1), 465, 2008 |