검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Energy-band alignment of (HfO2)(x)(Al2O3)(1-x) gate dielectrics deposited by atomic layer deposition on beta-Ga2O3 (-201) Yuan L, Zhang HP, Jia RX, Guo LX, Zhang YM, Zhang YM Applied Surface Science, 433, 530, 2018 |
| 2 |
Influence of HfAlO composition on memory effects of metal-oxide-semiconductor capacitors with Al2O3/HfAlO/Al2O3 layers and Pd electrode Gou HY, Chen S, Ding SJ, Sun QQ, Lu HL, Zhang DW, Wang PF Thin Solid Films, 529, 380, 2013 |
| 3 |
Electrical properties of quaternary HfAlTiO thin films grown by atomic layer deposition Alekhin AP, Chouprik AA, Grigal IP, Gudkova SA, Lebedinskii YY, Markeev AM, Zaitsev SA Thin Solid Films, 520(14), 4547, 2012 |
| 4 |
Improvements in the device characteristics of IZO-based transparent thin-film transistors with co-sputtered HfO2-Al2O3 gate dielectrics Son H, Kim J, Yang J, Cho D, Yi M Current Applied Physics, 11(4), S135, 2011 |
| 5 |
Improved characteristics for Pd nanocrystal memory with stacked HfAlO-SiO2 tunnel layer Kang TK, Liu HW, Wang FH, Lin CL, Liao TC, Wu WF Solid-State Electronics, 61(1), 100, 2011 |
| 6 |
Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories Molas G, Bocquet M, Buckley J, Grampeix H, Gely M, Colonna JP, Licitra C, Rochat N, Veyront T, Garros X, Martin F, Brianceau P, Vidal V, Bongiorno C, Lombardo S, De Salvo B, Deleonibus S Solid-State Electronics, 51(11-12), 1540, 2007 |
| 7 |
Development of plasma etching process for sub-50 nm TaN gate Bliznetsov V, Kumar R, Bera LK, Yip LW, Du AY, Hui TE Thin Solid Films, 504(1-2), 140, 2006 |
| 8 |
Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs Mathew S, Bera LK, Balasubramanian N, Joo MS, Cho BJ Thin Solid Films, 462-63, 11, 2004 |