화학공학소재연구정보센터
검색결과 : 38건
No. Article
1 Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs
Debehets J, Homm P, Menghini M, Chambers SA, Marchiori C, Heyns M, Locquet JP, Seo JW
Applied Surface Science, 440, 386, 2018
2 Nanometer-Thin Graphitic Carbon Buffer Layers for Electrolytic MnO2 for Thin-Film Energy Storage Devices
Deheryan S, Zargouni Y, Sinha R, Put B, Radisic A, Heyns M, Vereecken PM
Journal of the Electrochemical Society, 164(2), A538, 2017
3 Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure
Jayachandran S, Billen A, Douhard B, Conard T, Meersschaut J, Moussa A, Caymax M, Bender H, Vandervorst W, Heyns M, Delabie A
Applied Surface Science, 384, 152, 2016
4 Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry
Jayachandran S, Delabie A, Billen A, Dekkers H, Douhard B, Conard T, Meersschaut J, Caymax M, Vandervorst W, Heyns M
Applied Surface Science, 324, 251, 2015
5 Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
Gencarelli F, Shimura Y, Kumar A, Vincent B, Moussa A, Vanhaeren D, Richard O, Bender H, Vandervorst W, Caymax M, Loo R, Heyns M
Thin Solid Films, 590, 163, 2015
6 Direct correlation between the measured electrochemical capacitance, wettability and surface functional groups of CarbonNanosheets
Deheryan S, Cott DJ, Mertens PW, Heyns M, Vereecken PM
Electrochimica Acta, 132, 574, 2014
7 Growth rate for the selective epitaxial growth of III-V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments
Jiang S, Merckling C, Guo W, Waldron N, Caymax M, Vandervorst W, Seefeldt M, Heyns M
Journal of Crystal Growth, 391, 59, 2014
8 Chemical vapor deposition processes for the fabrication of epitaxial Si-O superlattices
Jayachandran S, Delabie A, Maggen J, Caymax M, Loo R, Meersschaut J, Lenka H, Vandervorst W, Heyns M
Thin Solid Films, 557, 36, 2014
9 Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6
Gencarelli F, Vincent B, Souriau L, Richard O, Vandervorst W, Loo R, Caymax M, Heyns M
Thin Solid Films, 520(8), 3211, 2012
10 The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures
Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Schulze A, Vandervorst W, Loo R, Heyns M, Meuris M, Hoffmann T, De Meyer K
Thin Solid Films, 520(8), 3326, 2012