검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy Hestroffer K, Lund C, Koksaldi O, Li HR, Schmidt G, Trippel M, Veit P, Bertram F, Lu N, Wang QX, Christen J, Kim MJ, Mishra UK, Keller S Journal of Crystal Growth, 465, 55, 2017 |
| 2 |
Growth of GaP and AlGaP on GaP(111) B using gas-source molecular-beam-epitaxy Barakat JB, Dadgostar S, Hestroffer K, Bierwagen O, Trampert A, Hatami F Journal of Crystal Growth, 477, 91, 2017 |
| 3 |
Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature Mata R, Hestroffer K, Budagosky J, Cros A, Bougerol C, Renevier H, Daudin B Journal of Crystal Growth, 334(1), 177, 2011 |