검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient Doscher H, Hens P, Beyer A, Tapfer L, Volz K, Stolz W Journal of Crystal Growth, 464, 2, 2017 |
| 2 |
Epitaxial growth of cubic silicon carbide on silicon using hot filament chemical vapor deposition Hens P, Brow R, Robinson H, Cromar M, Van Zeghbroeck B Thin Solid Films, 635, 48, 2017 |
| 3 |
Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100) Hens P, Wagner G, Holzing A, Hock R, Wellmann P Thin Solid Films, 522, 2, 2012 |
| 4 |
Effects of source material on epitaxial growth of fluorescent SiC Jokubavicius V, Hens P, Liljedahl R, Sun JW, Kaiser M, Wellmann P, Sano S, Yakimova R, Kamiyama S, Syvajarvi M Thin Solid Films, 522, 7, 2012 |