검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
In-situ monitoring during MBE growth of InAs based heterostructures Bhatnagar K, Rojas-Ramirez J, Caro M, Contreras R, Henninger B, Droopad R Journal of Crystal Growth, 425, 16, 2015 |
| 2 |
In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy Cordier Y, Baron N, Semond F, Massies J, Binetti M, Henninger B, Besendahl M, Zettler T Journal of Crystal Growth, 301, 71, 2007 |
| 3 |
Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors Bergunde T, Henninger B, Lunenburger M, Heuken M, Weyers M, Zettler JT Journal of Crystal Growth, 248, 235, 2003 |
| 4 |
Growth of InGaAsP/InP-laser structures monitored by using RAS techniques Wolfram P, Steimetz E, Ebert W, Henninger B, Zettler JT Journal of Crystal Growth, 248, 240, 2003 |