화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance
Gili E, Kunz VD, de Groot CH, Uchino T, Ashburn P, Donaghy DC, Hall S, Wang Y, Hemment PLF
Solid-State Electronics, 48(4), 511, 2004
2 Formation of conducting and insulating layered structures in Si by ion implantation - Process control using FTIR spectroscopy
Katsidis CC, Siapkas DI, Robinson AK, Hemment PLF
Journal of the Electrochemical Society, 148(12), G704, 2001