검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Vapor-phase epitaxy of gallium nitride by gallium arc discharge evaporation Heikman S, Keller S, Mishra UK Journal of Crystal Growth, 293(2), 335, 2006 |
| 2 |
Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN Hansen PJ, Vaithyanathan V, Wu Y, Mates T, Heikman S, Mishra UK, York RA, Schlom DG, Speck JS Journal of Vacuum Science & Technology B, 23(2), 499, 2005 |
| 3 |
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra UK, Speck JS Journal of Vacuum Science & Technology B, 22(3), 1145, 2004 |
| 4 |
AlGaN/GaN metal-oxlde-semiconductor heterostructure field-effect transistors using barium strontium titanate Hansen PJ, Shen L, Wu Y, Stonas A, Terao Y, Heikman S, Buttari D, Taylor TR, DenBaars SP, Mishra UK, York RA, Speck JS Journal of Vacuum Science & Technology B, 22(5), 2479, 2004 |
| 5 |
Growth and characteristics of Fe-doped GaN Heikman S, Keller S, Mates T, DenBaars SP, Mishra UK Journal of Crystal Growth, 248, 513, 2003 |
| 6 |
GaN planar-doped-barrier electron emitter with piezoelectric surface barrier lowering Shen L, Smochkova IP, Green DS, Heikman S, Mishra UK Journal of Vacuum Science & Technology B, 21(1), 540, 2003 |