검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Film and device characteristics of sputter-deposited hafnium zirconate gate dielectric Hegde RI Journal of the Electrochemical Society, 155(5), G121, 2008 |
| 2 |
Impact of deposition processes on properties of atomic-layer-deposited hafnium zirconate high-k dielectrics Triyoso DH, Hegde RI, Gregory R Electrochemical and Solid State Letters, 10(12), H354, 2007 |
| 3 |
Characteristics of atomic-layer-deposited thin HfxZr1-xO2 gate dielectrics Triyoso DH, Hegde RI, Schaeffer JK, Gregory R, Wang XD, Canonico M, Roan D, Hebert EA, Kim K, Jiang J, Rai R, Kaushik V, Samavedam SB, Rochat N Journal of Vacuum Science & Technology B, 25(3), 845, 2007 |
| 4 |
Characterization of HfO2 dielectric films with low energy SIMS Jiang ZX, Kim K, Lerma J, Sieloff D, Tseng H, Hegde RI, Luo TY, Yang JY, Triyoso DH, Tobin PJ Applied Surface Science, 252(19), 7172, 2006 |
| 5 |
Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2-TiO2 gate dielectrics Triyoso DH, Hegde RI, Wang XD, Stoker MW, Rai R, Ramon ME, White BE, Tobin PJ Journal of the Electrochemical Society, 153(9), G834, 2006 |
| 6 |
Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD Triyoso DH, Ramon M, Hegde RI, Roan D, Garcia R, Baker J, Wang XD, Fejes P, White BE, Tobin PJ Journal of the Electrochemical Society, 152(3), G203, 2005 |
| 7 |
Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition Triyoso DH, Hegde RI, Grant JM, Schaeffer JK, Roan D, White BE, Tobin PJ Journal of Vacuum Science & Technology B, 23(1), 288, 2005 |
| 8 |
Lanthanum aluminate by atomic layer deposition and molecular beam epitaxy Triyoso DH, Li H, Hegde RI, Yu Z, Moore K, Grant J, White BE, Tobin PJ Journal of Vacuum Science & Technology B, 23(6), 2480, 2005 |
| 9 |
Properties of oxide film atomic layer deposited from tetraethoxy silane, hafnium halides, and water Kukli K, Ritala M, Leskela M, Sajavaara T, Keinonen J, Hegde RI, Gilmer DC, Tobin PJ Journal of the Electrochemical Society, 151(5), F98, 2004 |
| 10 |
Thermal stability and electrical characterization of HfO2 films on thermally nitrided Si Bastos KP, Morais J, Miotti L, Soares GV, Pezzi RP, da Silva RCG, Boudinov H, Baumvol IJR, Hegde RI, Tseng HH, Tobinc PJ Journal of the Electrochemical Society, 151(6), F153, 2004 |