검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
ON-state characteristics of proton irradiated 4H-SiC Schottky diode: The calibration of model parameters for device simulation Vobecky J, Hazdra P, Zahlava V, Mihaila A, Berthou M Solid-State Electronics, 94, 32, 2014 |
| 2 |
Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs Hazdra P, Oswald J, Hospodkova A, Hulicius E, Pangrac J Thin Solid Films, 543, 83, 2013 |
| 3 |
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures Hospodkova A, Pangrac J, Oswald J, Hazdra P, Kuldova K, Vyskocil J, Hulicius E Journal of Crystal Growth, 315(1), 110, 2011 |
| 4 |
InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime Hospodkova A, Pangrac J, Vyskocil J, Oswald J, Vetushka A, Caha O, Hazdra P, Kuldova K, Hulicius E Journal of Crystal Growth, 317(1), 39, 2011 |
| 5 |
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots Hospodkova A, Hulicius E, Pangrac J, Oswald J, Vyskocil J, Kuldova K, Simecek T, Hazdra P, Caha O Journal of Crystal Growth, 312(8), 1383, 2010 |
| 6 |
Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy Hazdra P, Voves J, Hulicius E, Pangrac J, Sourek Z Applied Surface Science, 253(1), 85, 2006 |
| 7 |
InAs delta-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy Hazdra P, Voves J, Oswald J, Hulicius E, Pangrac J, Simecek T Journal of Crystal Growth, 248, 328, 2003 |
| 8 |
Helium irradiated high-power P-i-N diode with low ON-state voltage drop Vobecky J, Hazdra P, Zahlava V Solid-State Electronics, 47(1), 45, 2003 |
| 9 |
The application of platinum-silicide anode layer to decrease the static and turn-off losses in high-power P-i-N diode Vobecky J, Hazdra P Thin Solid Films, 433(1-2), 305, 2003 |