화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Polarity control during molecular beam epitaxy growth of Mg-doped GaN
Green DS, Haus E, Wu F, Chen L, Mishra UK, Speck JS
Journal of Vacuum Science & Technology B, 21(4), 1804, 2003
2 The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy
Haus E, Smorchkova IP, Heying B, Fini P, Poblenz C, Mates T, Mishra UK, Speck JS
Journal of Crystal Growth, 246(1-2), 55, 2002