검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers Darakehieva V, Paskova T, Schubert M, Paskov PP, Arwin H, Monemar B, Hommel D, Heuken M, Off J, Haskell BA, Fini PT, Speck JS, Nakamura S Journal of Crystal Growth, 300(1), 233, 2007 |
| 2 |
Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Onuma T, Koyama T, Chakraborty A, McLaurin M, Haskell BA, Fini PT, Keller S, Denaars SP, Speck JS, Nakamura S, Mishra UK Journal of Vacuum Science & Technology B, 25(4), 1524, 2007 |
| 3 |
Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy Kamber DS, Wu Y, Haskell BA, Newman S, DenBaars SP, Speck JS, Nakamura S Journal of Crystal Growth, 297(2), 321, 2006 |
| 4 |
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, Akasaki I, Han J, Sota T Nature Materials, 5(10), 810, 2006 |