| 1 |
Electrochemical Evidence of a Copper-Induced Etching of N-Type Si in Dilute Hydrofluoric-Acid Solutions
Martins LF, Seligman L, Santos SG, Dajello PC, Hasenack CM, Pasa AA
Journal of the Electrochemical Society, 144(5), L106, 1997 |
| 2 |
Si-SiO2 Electronic Interface Roughness as a Consequence of Si-SiO2 Topographic Interface Roughness
Lopes MC, Dossantos SG, Hasenack CM, Baranauskas V
Journal of the Electrochemical Society, 143(3), 1021, 1996 |
| 3 |
Metal Contamination of Silicon-Wafers Induced by Reactive Ion Etching Plasmas and Its Behavior upon Subsequent Cleaning Procedures
Verdonck P, Hasenack CM, Mansano RD
Journal of Vacuum Science & Technology B, 14(1), 538, 1996 |
| 4 |
A Less Critical Cleaning Procedure for Silicon-Wafer Using Diluted HF Dip and Boiling in Isopropyl-Alcohol as Final Steps
Filho SG, Hasenack CM, Salay LC, Mertens P
Journal of the Electrochemical Society, 142(3), 902, 1995 |
| 5 |
Numerical-Calculations of the Electrical Effects Induced by Structural Imperfections on MOS Capacitors
Lopes MC, Hasenack CM, Baranauskas V
Journal of the Electrochemical Society, 141(6), 1621, 1994 |
