검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy Bertness KA, Sanders AW, Rourke DM, Harvey TE, Roshko A, Schlager JB, Sanford NA Advanced Functional Materials, 20(17), 2911, 2010 |
| 2 |
Lateral variations in self-assembled InGaAs quantum dot distributions Roshko A, Harvey TE, Hyland BL, Lehman SY, Cobry KD Journal of Crystal Growth, 311(16), 4109, 2009 |
| 3 |
Topography of epitaxial GaAs surfaces for growth Lehman SY, Roshko A, Mirin RP, Bertness KA, Harvey TE, Cobry KD Journal of Vacuum Science & Technology B, 27(3), 1072, 2009 |
| 4 |
Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy Bertness KA, Roshko A, Mansfield LM, Harvey TE, Sanford NA Journal of Crystal Growth, 310(13), 3154, 2008 |
| 5 |
Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection Rowe MA, Gansen EJ, Greene MB, Rosenberg D, Harvey TE, Su MY, Hadfield RH, Nam SW, Mirin RP Journal of Vacuum Science & Technology B, 26(3), 1174, 2008 |
| 6 |
Nucleation conditions for catalyst-free GaN nanowires Bertness KA, Roshko A, Mansfield LM, Harvey TE, Sanford NA Journal of Crystal Growth, 300(1), 94, 2007 |
| 7 |
GaAs buffer layer morphology and lateral distributions of InGaAs quantum dots Roshko A, Harvey TE, Lehman SY, Mirin RR, Bertness KA, Hyland BL Journal of Vacuum Science & Technology B, 23(3), 1226, 2005 |
| 8 |
Accuracy of AlGaAs growth rates and composition determination using RHEED oscillations Harvey TE, Bertness KA, Hickernell RK, Wang CM, Splett JD Journal of Crystal Growth, 251(1-4), 73, 2003 |