화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Differential miRNA expression analysis of extracellular vesicles from brain microvascular pericytes in spontaneous hypertensive rats
Wu QB, Yuan XC, Li BW, Yang JN, Han RQ, Zhang HG, Xiu RJ
Biotechnology Letters, 42(3), 389, 2020
2 Intraspinal administration of interleukin-7 promotes neuronal apoptosis and limits functional recovery through JAK/STAT5 pathway following spinal cord injury
Yuan XC, Wu QB, Wang P, Jing YL, Yao HJ, Tang YS, Han RQ, He WL, Li ZG, Zhang HG, Xiu RJ
Biochemical and Biophysical Research Communications, 514(3), 1023, 2019
3 Improved Uniformity of Resistive Switching Behaviors in HfO2 Thin Films with Embedded Al Layers
Yu SM, Gao B, Dai HB, Sun B, Liu LF, Liu XY, Han RQ, Kang JF, Yu B
Electrochemical and Solid State Letters, 13(2), H36, 2010
4 Strain distributions in lattice-mismatched semiconductor core-shell nanowires
Sondergaard N, He YH, Fan C, Han RQ, Guhr T, Xu HQ
Journal of Vacuum Science & Technology B, 27(2), 827, 2009
5 Scalability and reliability characteristics of CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications
Kang JF, Yu HY, Ren C, Sa N, Yang H, Li MF, Chan DSH, Liu XY, Han RQ, Kwong DL
Journal of the Electrochemical Society, 154(11), H927, 2007
6 Oxygen-vacancies-related room-temperature ferromagnetism in polycrystalline bulk co-doped TiO2
Kong LG, Kang JF, Wang Y, Sun L, Liu LF, Liu XY, Zhang X, Han RQ
Electrochemical and Solid State Letters, 9(1), G1, 2006
7 An improved pregate cleaning process for high-k gate dielectric fabrication
Kang JF, Yu HY, Ren C, Liu XY, Han RQ, Yu B, Kwong DL
Electrochemical and Solid State Letters, 8(11), G314, 2005
8 Carrier effective mobilities in germanium MOSFET inversion layer investigated by Monte Carlo simulation
Xia XL, Du G, Liu XY, Kang JF, Han RQ
Solid-State Electronics, 49(12), 1942, 2005
9 A self-aligned gate-all-around MOS transistor on single-grain silicon
Zhang SD, Han RQ, Wang HM, Chan MS
Electrochemical and Solid State Letters, 7(4), G59, 2004
10 A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET
Huang R, Zhang X, Han RQ, Wang YY
Solid-State Electronics, 47(8), 1275, 2003