검색결과 : 13건
No. | Article |
---|---|
1 |
Differential miRNA expression analysis of extracellular vesicles from brain microvascular pericytes in spontaneous hypertensive rats Wu QB, Yuan XC, Li BW, Yang JN, Han RQ, Zhang HG, Xiu RJ Biotechnology Letters, 42(3), 389, 2020 |
2 |
Intraspinal administration of interleukin-7 promotes neuronal apoptosis and limits functional recovery through JAK/STAT5 pathway following spinal cord injury Yuan XC, Wu QB, Wang P, Jing YL, Yao HJ, Tang YS, Han RQ, He WL, Li ZG, Zhang HG, Xiu RJ Biochemical and Biophysical Research Communications, 514(3), 1023, 2019 |
3 |
Improved Uniformity of Resistive Switching Behaviors in HfO2 Thin Films with Embedded Al Layers Yu SM, Gao B, Dai HB, Sun B, Liu LF, Liu XY, Han RQ, Kang JF, Yu B Electrochemical and Solid State Letters, 13(2), H36, 2010 |
4 |
Strain distributions in lattice-mismatched semiconductor core-shell nanowires Sondergaard N, He YH, Fan C, Han RQ, Guhr T, Xu HQ Journal of Vacuum Science & Technology B, 27(2), 827, 2009 |
5 |
Scalability and reliability characteristics of CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications Kang JF, Yu HY, Ren C, Sa N, Yang H, Li MF, Chan DSH, Liu XY, Han RQ, Kwong DL Journal of the Electrochemical Society, 154(11), H927, 2007 |
6 |
Oxygen-vacancies-related room-temperature ferromagnetism in polycrystalline bulk co-doped TiO2 Kong LG, Kang JF, Wang Y, Sun L, Liu LF, Liu XY, Zhang X, Han RQ Electrochemical and Solid State Letters, 9(1), G1, 2006 |
7 |
An improved pregate cleaning process for high-k gate dielectric fabrication Kang JF, Yu HY, Ren C, Liu XY, Han RQ, Yu B, Kwong DL Electrochemical and Solid State Letters, 8(11), G314, 2005 |
8 |
Carrier effective mobilities in germanium MOSFET inversion layer investigated by Monte Carlo simulation Xia XL, Du G, Liu XY, Kang JF, Han RQ Solid-State Electronics, 49(12), 1942, 2005 |
9 |
A self-aligned gate-all-around MOS transistor on single-grain silicon Zhang SD, Han RQ, Wang HM, Chan MS Electrochemical and Solid State Letters, 7(4), G59, 2004 |
10 |
A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET Huang R, Zhang X, Han RQ, Wang YY Solid-State Electronics, 47(8), 1275, 2003 |