검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Selective Epitaxial Growth with Full Control of Pattern Dependency Behavior for pMOSFET Structures Kolahdouz M, Hallstedt J, Ostling M, Wise R, Radamson HH Journal of the Electrochemical Society, 156(3), H169, 2009 |
| 2 |
On the electron mobility enhancement in biaxially strained Si MOSFETs Driussi F, Esseni D, Selmi L, Hellstrom PE, Malm G, Hallstedt J, Ostling M, Grasby TJ, Leadley DR, Mescot X Solid-State Electronics, 52(4), 498, 2008 |
| 3 |
Selective epitaxial growth of B-doped SiGe and HCl etch Si for the formation of SiGe:B recessed source and drain (pMOS transistors) Radamson HH, Kolahdouz M, Ghandi R, Hallstedt J Thin Solid Films, 517(1), 84, 2008 |
| 4 |
Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs Hallstedt J, Hellstrom PE, Radamson HH Thin Solid Films, 517(1), 117, 2008 |
| 5 |
The influence of Si coverage in a chip on layer profile of selectively grown Si(1-x)Ge(x) layers using RPCVD technique Kolahdouz M, Ghandi R, Hallstedt J, Osling M, Wise R, Wejtmans H, Radamson HH Thin Solid Films, 517(1), 257, 2008 |
| 6 |
Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers Ghandi R, Kolahdouz M, Hallstedt J, Wise R, Wejtmans H, Radamson HH Thin Solid Films, 517(1), 334, 2008 |
| 7 |
Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition Hallstedt J, Suvar E, Persson POA, Hultman L, Wang YB, Radamson HH Applied Surface Science, 224(1-4), 46, 2004 |