검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Comparison of O-2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy Konishi K, Goto K, Togashi R, Murakami H, Higashiwaki M, Kuramata A, Yamakoshi S, Monemar B, Kumagai Y Journal of Crystal Growth, 492, 39, 2018 |
| 2 |
Halide vapor phase epitaxy of Si doped beta-Ga2O3 and its electrical properties Goto K, Konishi K, Murakami H, Kumagai Y, Monemar B, Higashiwaki M, Kuramata A, Yamakoshi S Thin Solid Films, 666, 182, 2018 |
| 3 |
Quasi-heteroepitaxial growth of beta-Ga2O3 on off-angled sapphire (0001) substrates by halide vapor phase epitaxy Oshima Y, Villora EG, Shimamura K Journal of Crystal Growth, 410, 53, 2015 |
| 4 |
Thermodynamic study of beta-Ga2O3 growth by halide vapor phase epitaxy Nomura K, Goto K, Togashi R, Murakami H, Kumagai Y, Kuramata A, Yamakoshi S, Koukitu A Journal of Crystal Growth, 405, 19, 2014 |
| 5 |
Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experiments Fujii T, Yoshii N, Kumagai Y, Koukitu A Journal of Crystal Growth, 314(1), 108, 2011 |
| 6 |
Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy Darakchieva V, Monemar B, Usui A, Saenger M, Schubert M Journal of Crystal Growth, 310(5), 959, 2008 |
| 7 |
Aluminum nitride substrate growth by halide vapor transport epitaxy Bliss DF, Tassev VL, Weyburne D, Bailey JS Journal of Crystal Growth, 250(1-2), 1, 2003 |
| 8 |
Epitaxial growth of ZnO thin films exhibiting room-temperature ultraviolet emission by atmospheric pressure chemical vapor deposition Kaiya K, Omichi K, Takahashi N, Nakamura T, Okamoto S, Yamamoto H Thin Solid Films, 409(1), 116, 2002 |