| 1 |
Carrier concentrations and deep trap concentrations in high temperature GaAs
Halder NC, Krishnan V, Parshall D, Totzke DG
Journal of Vacuum Science & Technology B, 20(2), 685, 2002 |
| 2 |
Near-surface deep-trap and bulk deep-trap states in InxGa1-xAs/GaAs
Halder NC, Genareau K
Journal of Vacuum Science & Technology B, 20(6), 2408, 2002 |
| 3 |
Three-dimensional carrier concentration profiles and ionization energy plots for low-temperature GaAs
Halder NC, Krishnan V, Baker B
Journal of Vacuum Science & Technology B, 19(6), 2295, 2001 |
| 4 |
Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopy
Halder NC, Goodman T
Journal of Vacuum Science & Technology B, 17(1), 60, 1999 |
| 5 |
More exact method of determination of the trap concentration of deep levels: Application to molecular beam epitaxy-grown, low temperature GaAs
Halder NC, Zhao X
Journal of Vacuum Science & Technology B, 17(5), 2019, 1999 |
| 6 |
Role of rate window, transient time, and reverse bias field on the deep levels of LT-GaAs by field effect transient spectroscopy
Halder NC, Goodman T
Journal of Vacuum Science & Technology B, 15(6), 2057, 1997 |
