화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 The search for near interface oxide traps - First-principles calculations on intrinsic SiO2 defects
Knaup JM, Deak P, Gali A, Hajnal Z, Frauenheim T, Choyke JW
Materials Science Forum, 483, 569, 2005
2 Global optimization of silicon nanoclusters
Chaudhuri I, Sertl S, Hajnal Z, Dellnitz M, Frauenheim T
Applied Surface Science, 226(1-3), 108, 2004
3 Theoretical study of the adsorption of a PTCDA monolayer on S-passivated GaAs(100)
Szucs B, Hajnal Z, Scholz R, Sanna S, Frauenheim T
Applied Surface Science, 234(1-4), 173, 2004
4 Chalcogen passivation of GaAs(100) surfaces: theoretical study
Szucs B, Hajnal Z, Frauenheim T, Gonzalez C, Ortega J, Perez R, Flores F
Applied Surface Science, 212, 861, 2003
5 A cause for SiC/SiO2 interface states: The site selection of oxygen in SiC
Deak P, Gali A, Hajnal Z, Frauenheim T, Son NT, Janzen E, Choyke WJ, Ordejon P
Materials Science Forum, 433-4, 535, 2002
6 Intrinsic defect complexes in alpha-SiC: the formation of antisite Pairs
Rauls E, Hajnal Z, Gali A, Deak P, Frauenheim T
Materials Science Forum, 353-356, 435, 2001
7 Electrical activity of isolated oxygen defects in SiC
Gali A, Heringer D, Hajnal Z, Frauenheim T, Choyke WJ
Materials Science Forum, 353-356, 463, 2001
8 (10(1)over-bar-0)- and (11(2)over-bar-0)-surfaces in 2H-, 4H-and 6H-SiC
Rauls E, Hajnal Z, Deak P, Frauenheim T
Materials Science Forum, 338-3, 365, 2000
9 Hydrogenated and deuterated iron clusters: Infrared spectra and density functional calculations
Knickelbein MB, Koretsky GM, Jackson KA, Pederson MR, Hajnal Z
Journal of Chemical Physics, 109(24), 10692, 1998
10 Recombination with Larger Than Bandgap Energy at Centers on the Surface of Silicon Microstructures
Deak P, Hajnal Z, Miro J
Thin Solid Films, 276(1-2), 290, 1996