화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
Hubacek T, Hospodkova A, Oswald J, Kuldova K, Pangrac J, Zikova M, Hajek F, Dominec F, Florini N, Komninou P, Ledoux G, Dujardin C
Journal of Crystal Growth, 507, 310, 2019
2 Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties
Zikova M, Hospodkova A, Pangrac J, Hubacek T, Oswald J, Kuldova K, Hajek F, Ledoux G, Dujardin C
Journal of Crystal Growth, 506, 8, 2019