검색결과 : 2건
No. | Article |
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1 |
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface Hubacek T, Hospodkova A, Oswald J, Kuldova K, Pangrac J, Zikova M, Hajek F, Dominec F, Florini N, Komninou P, Ledoux G, Dujardin C Journal of Crystal Growth, 507, 310, 2019 |
2 |
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties Zikova M, Hospodkova A, Pangrac J, Hubacek T, Oswald J, Kuldova K, Hajek F, Ledoux G, Dujardin C Journal of Crystal Growth, 506, 8, 2019 |