화학공학소재연구정보센터
검색결과 : 27건
No. Article
1 Effects of ion irradiation on the structural and electrical properties of HfO2/SiON/Si p-metal oxide semiconductor capacitors
Manikanthababu N, Saikiran V, Basu T, Prajna K, Vajandar S, Pathak AP, Panigrahi BK, Osipowicz T, Rao SVSN
Thin Solid Films, 682, 156, 2019
2 A field investigation of passive radiative cooling under Hong Kong's climate
Tso CY, Chan KC, Chao CYH
Renewable Energy, 106, 52, 2017
3 Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications
Berdova M, Wiemer C, Lamperti A, Tallarida G, Cianci E, Lamagna L, Losa S, Rossini S, Somaschini R, Gioveni S, Fanciulli M, Franssila S
Applied Surface Science, 368, 470, 2016
4 Effect of angle of deposition on micro-roughness parameters and optical properties of HfO2 thin films deposited by reactive electron beam evaporation
Tokas RB, Jena S, Thakur S, Sahoo NK
Thin Solid Films, 609, 42, 2016
5 Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium
Zhu MP, Yi K, Arhilger D, Qi HJ, Shao JD
Thin Solid Films, 540, 17, 2013
6 Improved interface properties and reliability for Hf-In-Zn-O semiconductor capacitors with an electric-double-layer gate dielectric by inserting a HfO2 interlayer
Zou X, Fang GJ, Qin PL, Wang HJ, Song ZC, Wang HN, Long H, Wan Q
Thin Solid Films, 540, 261, 2013
7 Structural, morphological, optical and photoluminescence properties of HfO2 thin films
Ma CY, Wang WJ, Wang J, Miao CY, Li SL, Zhang QY
Thin Solid Films, 545, 279, 2013
8 Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices
Mroczynski R, Taube A, Gieraltowska S, Guziewicz E, Godlewski M
Applied Surface Science, 258(21), 8366, 2012
9 Phase transition in sputtered HfO2 thin films: A qualitative Raman study
Belo GS, Nakagomi F, Minko A, da Silva SW, Morais PC, Buchanan DA
Applied Surface Science, 261, 727, 2012
10 Degradation and breakdown characteristics of Al/HfYOx/GaAs capacitors
Miranda E, Mahata C, Das T, Sune J, Maiti CK
Thin Solid Films, 520(7), 2956, 2012