검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors Fobelets K, Rumyantsev SL, Hackbarth T, Shur MS Solid-State Electronics, 53(6), 626, 2009 |
| 2 |
Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET Zerounian N, Enciso-Aguilar M, Hackbarth T, Herzog HJ, Aniel F Solid-State Electronics, 51(3), 449, 2007 |
| 3 |
Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition Chrastina D, Isella G, Bollani M, Rossner B, Muller E, Hackbarth T, Wintersberger E, Zhong Z, Stangl J, von Kanel H Journal of Crystal Growth, 281(2-4), 281, 2005 |
| 4 |
Low-frequency noise suppression and dc characteristics enhancement in sub-mu m metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE Myronov M, Durov S, Mironov OA, Parker EHC, Whall TE, Hackbarth T, Hock G, Herzog HJ, Konig U Applied Surface Science, 224(1-4), 265, 2004 |
| 5 |
Microwave performances of silicon heterostructure-FETs Aniel F, Enciso M, Richard S, Giguerre L, Zerounian N, Crozat P, Adde R, Hackbarth T, Herzog JH, Konig U Applied Surface Science, 224(1-4), 370, 2004 |
| 6 |
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices Isella G, Chrastina D, Rossner B, Hackbarth T, Herzog H, Konig U, von Kanel H Solid-State Electronics, 48(8), 1317, 2004 |
| 7 |
Comparison of sub-micron Si : SiGe heterojunction nFETs to Si nMOSFET in present-day technologies Fobelets K, Jeamsaksiri W, Papavasilliou C, Vilches T, Gaspari V, Velazquez-Perez JE, Michelakis K, Hackbarth T, Konig U Solid-State Electronics, 48(8), 1401, 2004 |
| 8 |
Large-signal modelling including low-frequency dispersion of n-channel SiGe MODFETs and MMIC applications Kallfass I, Brazil TJ, OhAnnaidh B, Abele P, Hackbarth T, Zeuner M, Konig U, Schumacher H Solid-State Electronics, 48(8), 1433, 2004 |
| 9 |
Strained Si HFETs for microwave applications: state-of-the-art and further approaches Aguilar ME, Rodriguez M, Zerounian N, Aniel F, Hackbarth T, Herzog HJ, Konig U, Mantl S, Hollander B, Chrastina D, Isella G, von Kanel H, Lyutovich K Solid-State Electronics, 48(8), 1443, 2004 |
| 10 |
Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance Hackbarth T, Herzog H, Hieber KH, Konig U, Mantl S, Hollander B, Lenk S, von Kanel H, Enciso M, Aniel F, Giguerre L Solid-State Electronics, 48(10-11), 1921, 2004 |