검색결과 : 2건
No. | Article |
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1 |
Elaboration and characterization of boron doping during SiC growth by VLS mechanism Soueidan M, Ferro G, Nsouli B, Roumie M, Habka N, Souliere V, Bluet JM, Kazan M Journal of Crystal Growth, 327(1), 46, 2011 |
2 |
Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth Pinault-Thaury MA, Tillocher T, Kobor D, Habka N, Jomard F, Chevallier J, Barjon J Journal of Crystal Growth, 335(1), 31, 2011 |