화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Elaboration and characterization of boron doping during SiC growth by VLS mechanism
Soueidan M, Ferro G, Nsouli B, Roumie M, Habka N, Souliere V, Bluet JM, Kazan M
Journal of Crystal Growth, 327(1), 46, 2011
2 Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth
Pinault-Thaury MA, Tillocher T, Kobor D, Habka N, Jomard F, Chevallier J, Barjon J
Journal of Crystal Growth, 335(1), 31, 2011