검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures Prall C, Kaspari C, Brunner F, Haberland K, Weyers M, Rueter D Journal of Crystal Growth, 415, 1, 2015 |
| 2 |
Anisotropic bow and plastic deformation of GaN on silicon Dadgar A, Fritze S, Schulz O, Hennig J, Blasing J, Witte H, Diez A, Heinle U, Kunze M, Daumiller I, Haberland K, Krost A Journal of Crystal Growth, 370, 278, 2013 |
| 3 |
In-Situ Monitoring the Growth of Polypyrrole Films at Liquid/Solid Interface Using a Combination of Polarized Infrared Spectroscopy and Reflectance Anisotropy Spectroscopy Sun GG, Zhang X, Kaspari C, Haberland K, Rappich J, Hinrichs K Journal of the Electrochemical Society, 159(10), H811, 2012 |
| 4 |
Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate Hoffmann V, Knauer A, Brunner C, Einfeldt S, Weyers M, Trankle G, Haberland K, Zettler JT, Kneissl M Journal of Crystal Growth, 315(1), 5, 2011 |
| 5 |
Heteroepitaxy of GaN on silicon: In situ measurements Krost A, Dadgar A, Schulze F, Clos R, Haberland K, Zettler T Materials Science Forum, 483, 1051, 2005 |
| 6 |
On the AlAs/GaAs (001) interface dielectric anisotropy Hunderi O, Zettler JT, Haberland K Thin Solid Films, 472(1-2), 261, 2005 |
| 7 |
In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature Dadgar A, Schulze F, Zettler T, Haberland K, Clos R, Strassburger G, Blasing J, Diez A, Krost A Journal of Crystal Growth, 272(1-4), 72, 2004 |
| 8 |
Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE Steins R, Kaluza N, Hardtdegen H, Zorn M, Haberland K, Zettler JT Journal of Crystal Growth, 272(1-4), 81, 2004 |
| 9 |
In-situ determination of interface roughness in MOVPE-grown visible VCSELs by reflectance spectroscopy Haberland K, Zorn M, Klein A, Bhattacharya A, Weyers M, Zettler JT, Richter W Journal of Crystal Growth, 248, 194, 2003 |
| 10 |
MOVPE process development for 650 nm VCSELS using optical in-situ techniques Zorn M, Haberland K, Knigge A, Bhattacharya A, Weyers M, Zettler JT, Richter W Journal of Crystal Growth, 235(1-4), 25, 2002 |