| 1 |
Threshold voltage tuning in AlGaN/GaN HFETs with p-type Cu2O gate synthesized by magnetron reactive sputtering
Wang L, Li LA, Xie T, Wang XZ, Liu XK, Ao JP
Applied Surface Science, 437, 98, 2018 |
| 2 |
Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering
Zhang T, Wang L, Li XB, Bu YY, Pu TF, Wang RL, Li LA, Ao JP
Applied Surface Science, 462, 799, 2018 |
| 3 |
Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition
Tian F, Chor EF
Thin Solid Films, 518(24), E121, 2010 |
| 4 |
GaN-based FETs using Cat-CVD SiN passivation for millimeter-wave applications
Higashiwaki M, Mimura T, Matsui T
Thin Solid Films, 516(5), 548, 2008 |
| 5 |
Control of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures
Hasegawa H
Current Applied Physics, 7(3), 318, 2007 |
| 6 |
Analytical model of drain current of strained-Si/strained-Si1-yGey/relaxed-Si1-xGex NMOSFETs and PMOSFETs for circuit simulation
Bindu B, DasGupta N, DasGupta A
Solid-State Electronics, 50(3), 448, 2006 |
| 7 |
Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors
Hwang JH, Schaff WJ, Green BM, Cha HY, Eastman LF
Solid-State Electronics, 48(2), 363, 2004 |
| 8 |
Strained Si HFETs for microwave applications: state-of-the-art and further approaches
Aguilar ME, Rodriguez M, Zerounian N, Aniel F, Hackbarth T, Herzog HJ, Konig U, Mantl S, Hollander B, Chrastina D, Isella G, von Kanel H, Lyutovich K
Solid-State Electronics, 48(8), 1443, 2004 |
| 9 |
Growth parameter dependence of gain compression in AlGaN/GaN HFETs
Faraclas EW, Islam SS, Anwar AFM
Solid-State Electronics, 48(10-11), 1849, 2004 |
| 10 |
AlSb/InAs HEMTs with a TiW/Au gate metalization for improved stability
Boos JB, Bennett BR, Kruppa W, Park D, Mittereder J, Chang W, Turner NH
Solid-State Electronics, 47(2), 181, 2003 |
