검색결과 : 36건
| No. | Article |
|---|---|
| 1 |
A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach Hung CW, Chang CH, Chen WC, Chen CC, Chen HI, Tsai YT, Tsai JH, Liu WC Solid-State Electronics, 124, 5, 2016 |
| 2 |
Characteristics enhancement of a GaAs based heterostructure field-effect transistor with an electrophoretic deposition (EPD) surface treated gate structure Chen CC, Chen HI, Liu IP, Chou PC, Liou JK, Tsai YT, Liu WC Applied Surface Science, 341, 120, 2015 |
| 3 |
Reduction of leakage current by O-2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors Jiang Y, Wang QP, Zhang FZ, Li L, Zhou DQ, Liu Y, Wang DJ, Ao JP Applied Surface Science, 351, 1155, 2015 |
| 4 |
Alternative isolation-feature geometries and polarization-engineering of polar AlGaN/GaN HFETs Loghmany A, Valizadeh P Solid-State Electronics, 103, 162, 2015 |
| 5 |
Simulation study of GaN-based HFETs with graded AlGaN barrier Zhou XY, Feng ZH, Fang YL, Wang YG, Lv YJ, Dun SB, Gu GD, Tan X, Song XB, Yin JY, Cai SJ Solid-State Electronics, 109, 90, 2015 |
| 6 |
On a transistor-type hydrogen gas sensor prepared by an electrophoretic deposition (EPD) approach Chen CC, Chen HI, Liu IP, Chou PC, Liou JK, Chiou YJ, Liu HY, Liu WC International Journal of Hydrogen Energy, 39(25), 13320, 2014 |
| 7 |
Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate Kim DS, Won CH, Kim RH, Lim BO, Choi GW, Lee BH, Kim HJ, Hong IP, Lee JH Journal of Crystal Growth, 395, 5, 2014 |
| 8 |
Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates Moon SW, Twynam J, Lee J, Seo D, Jung S, Choi HG, Shim H, Yim JS, Roh SD Solid-State Electronics, 96, 19, 2014 |
| 9 |
Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator Kim DK, Sindhuri V, Jo YW, Kim DS, Kang HS, Lee JH, Lee YS, Bae Y, Hahm SH, Lee JH Solid-State Electronics, 100, 11, 2014 |
| 10 |
Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs Goswami A, Trew RJ, Bilbro GL Solid-State Electronics, 80, 23, 2013 |