| 1 |
On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principles methods
Escano MCS, Asubar JT, Yatabe Z, David MY, Uenuma M, Tokuda H, Uraoka Y, Kuzuhara M, Tani M
Applied Surface Science, 481, 1120, 2019 |
| 2 |
Determination of the input parameters for inelastic background analysis combined with HAXPES using a reference sample
Zborowski C, Renault O, Torres A, Yamashita Y, Grenet G, Tougaard S
Applied Surface Science, 432, 60, 2018 |
| 3 |
Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N-2 plasma surface treatment
Liu H, Zhang ZJ, Luo WJ
Solid-State Electronics, 144, 60, 2018 |
| 4 |
Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing
Huang SJ, Chou CW, Su YK, Lin JH, Yu HC, Chen DL, Ruan JL
Applied Surface Science, 401, 373, 2017 |
| 5 |
Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on 150-mm silicon substrate
Sun H, Liu MH, Liu P, Lin XN, Cui XL, Chen JG, Chen DM
Solid-State Electronics, 130, 28, 2017 |
| 6 |
Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNX passivation
Bai ZY, Du JF, Liu Y, Xin Q, Liu Y, Yu Q
Solid-State Electronics, 133, 31, 2017 |
| 7 |
Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse
Hemmi F, Thomas C, Lai YC, Higo A, Watamura Y, Samukawa S, Otsuji T, Suemitsu T
Solid-State Electronics, 137, 1, 2017 |
| 8 |
A compact drain current model for heterostructure HEMTs including 2DEG density solution with two subbands
Deng WL, Huang JK, Ma XY, Liou JJ, Yu F
Solid-State Electronics, 115, 54, 2016 |
| 9 |
A compact model of the reverse gate-leakage current in GaN-based HEMTs
Ma XY, Huang JK, Fang JL, Deng WL
Solid-State Electronics, 126, 10, 2016 |
| 10 |
Multibias and thermal behavior of microwave GaN and GaAs based HEMTs
Alim MA, Rezazadeh AA, Gaquiere C
Solid-State Electronics, 126, 67, 2016 |
