| 1 |
Characterization and optimization of MIS-HEMTs device of high similar to k dielectric material on quaternary barrier of Al0.42In0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power switching application
Tarauni YU, Thiruvadigal DJ, Joseph HB
Applied Surface Science, 488, 427, 2019 |
| 2 |
Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs
Takhar K, Upadhyay BB, Yadav YK, Ganguly S, Saha D
Applied Surface Science, 481, 219, 2019 |
| 3 |
Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy
Kim YC, Son BH, Jeong HY, Park KH, Ahn YH
Current Applied Physics, 19(4), 406, 2019 |
| 4 |
High temperature ammonia MBE-Real way to improve crystal quality of nitride heterostructures
Petrov SI, Alexeev AN, Mamaev VV, Novikov SA, Lutsenko EV, Rzheutski MV
Journal of Crystal Growth, 514, 40, 2019 |
| 5 |
High-periphery GaN HEMT modeling up to 65 GHz and 200 degrees C
Crupi G, Raffo A, Vadala V, Vannini G, Caddemi A
Solid-State Electronics, 152, 11, 2019 |
| 6 |
Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier
Kim JG, Kang SH, Janicki L, Lee JH, Ju JM, Kim KW, Lee YS, Lee SH, Lim JW, Kwon HS, Lee JH
Solid-State Electronics, 152, 24, 2019 |
| 7 |
A compact model and TCAD simulation for GaN-gate injection transistor (GIT)
Garcia F, Shamsir S, Islam SK
Solid-State Electronics, 151, 52, 2019 |
| 8 |
Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface
Chen DB, Wan LJ, Li J, Liu ZK, Li GQ
Solid-State Electronics, 151, 60, 2019 |
| 9 |
Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment
Kurt G, Gulseren ME, Ghobadi TGU, Ural S, Kayal OA, Ozturk M, Butun B, Kabak M, Ozbay E
Solid-State Electronics, 158, 22, 2019 |
| 10 |
Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications
Yao JN, Lin YC, Lin MS, Huang TJ, Hsu HT, Sze SM, Chang EY
Solid-State Electronics, 157, 55, 2019 |
