화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Improvement of nanoscale patterning of heavily doped p-type GaAs by atomic force microscope (AFM)-based surface oxidation process
Matsuzaki Y, Yamada A, Konagai M
Journal of Crystal Growth, 209(2-3), 509, 2000
2 GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10(20) cm(-3) grown by solid-source molecular beam epitaxy using CBr4
Micovic M, Nordquist C, Lubyshev D, Mayer TS, Miller DL, Streater RW, SpringThorpe AJ
Journal of Vacuum Science & Technology B, 16(3), 972, 1998