검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Gate Oxide Degradation Caused by Anomalous Oxidation of Bf2 Ion-Implanted Mosi2 on Polycrystalline Silicon Kato J, Takeuchi M, Tanaka K Journal of the Electrochemical Society, 141(9), 2552, 1994 |
| 2 |
The Annealing Time and Temperature-Dependence of Electrical Dopant Activation in High-Dose Bf2 Ion-Implanted Silicon Kato J Journal of the Electrochemical Society, 141(11), 3158, 1994 |