| 1 |
Effects of various gate materials on electrical degradation of a-Si:H TFT in industrial display application
Ho CY, Chang YJ
Solid-State Electronics, 116, 130, 2016 |
| 2 |
Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs
Lee MH, Tai CW, Huang JJ
Solid-State Electronics, 80, 72, 2013 |
| 3 |
The Effects of Phosphorus Doping in the a-Si:H and a-SiN:H on the Electrical Characteristics of a-Si:H TFT
Lee SK, Ji JH, Son WH, Choi SY
Molecular Crystals and Liquid Crystals, 563, 26, 2012 |
| 4 |
Influence of Phosphorus Doping in the Active Layer with Deposition Time and Gas Flow Rate in a-Si:H Thin Film Transistor
Kim BJ, Lee SK, Kim AR, Choi SY
Molecular Crystals and Liquid Crystals, 550, 112, 2011 |
| 5 |
a-Si:H TFT의 누설전류 및 문턱전압 특성 연구
양기정, 윤도영
Korean Chemical Engineering Research, 48(6), 737, 2010 |
| 6 |
Characterization of a-Si:H TFTs with Various Phosphorus Concentrations in a-SiN:H Layer
Kim JW, Kim BJ, Sohn YS, Choi SY
Molecular Crystals and Liquid Crystals, 532, 535, 2010 |
| 7 |
A Study on the Relationship Between Photo Leakage Currents of a-Si:H TFT and Photon Energy Transmittance of Various Color Spectrum Filters
Choi KM, Kwon SJ, Cho ES
Molecular Crystals and Liquid Crystals, 532, 551, 2010 |
| 8 |
A coplanar hydrogenated amorphous silicon thin-film transistor for controlling backlight brightness of liquid-crystal display
Kim SH, Kim EB, Choi HY, Kang MH, Hur JH, Jang J
Solid-State Electronics, 52(3), 478, 2008 |
| 9 |
Improvement of sub-threshold current models for a-SM thin-film transistors
Wang LJ, Zhu J, Liu CL, Liu GJ, Shao XB, Yan DH
Solid-State Electronics, 51(5), 703, 2007 |
| 10 |
Source-drain barrier height engineering for suppressing the a-Si : H TFTs photo leakage current
Wang MC, Chang TC, Liu PT, Li YY, Huang FS, Mei YJ, Chen JR
Thin Solid Films, 516(2-4), 470, 2007 |
