검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV Journal of Crystal Growth, 483, 265, 2018 |
| 2 |
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) Nikiforov AI, Timofeev VA, Tuktamyshev AR, Yakimov AI, Mashanov VI, Gutakovskii AK Journal of Crystal Growth, 457, 215, 2017 |
| 3 |
Sn - Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy Talochkin AB, Timofeev VA, Gutakovskii AK, Mashanov VI Journal of Crystal Growth, 478, 205, 2017 |
| 4 |
Unexpected travel of Lomer-type dislocations in Ge/GexSi1-x/Si(001) heterostructures Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV Thin Solid Films, 616, 348, 2016 |
| 5 |
Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV Journal of Crystal Growth, 338(1), 12, 2012 |
| 6 |
Specific features of formation and propagation of 60 degrees and 90 degrees misfit dislocations in GexS1-x/Si films with x > 0.4 Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV Journal of Crystal Growth, 312(21), 3080, 2010 |
| 7 |
Formation of edge misfit dislocations in Ge chi Si1-chi (chi similar to 0.4-0.5) films grown on misoriented (001) -> (111) Si substrates Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV Journal of Crystal Growth, 310(15), 3422, 2008 |
| 8 |
Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO(2) for non-volatile memory device Stepina NP, Dvurechenskii AV, Armbrister VA, Kirienko VV, Novikov PL, Kesler VG, Gutakovskii AK, Smagina ZV, Spesivtzev EV Thin Solid Films, 517(1), 313, 2008 |
| 9 |
Dominating nucleation of misfit dislocations from the surface in GeSi/Si(001) films with a stepwise composition grown by means of molecular-beam epitaxy Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Revenko MA, Sokolov L Journal of Crystal Growth, 293(2), 247, 2006 |
| 10 |
Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov L Journal of Crystal Growth, 297(1), 57, 2006 |