검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Process conditions optimization for the maximum deposition rate and uniformity in vertical rotating disc MOCVD reactors based on CFD modeling Mitrovic B, Gurary A, Quinn W Journal of Crystal Growth, 303(1), 323, 2007 |
| 2 |
On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters Mitrovic B, Gurary A, Kadinski L Journal of Crystal Growth, 287(2), 656, 2006 |
| 3 |
Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors Mitrovic B, Parekh A, Ramer J, Merai V, Armour EA, Kadinski L, Gurary A Journal of Crystal Growth, 289(2), 708, 2006 |
| 4 |
Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors Kadinski L, Merai V, Parekh A, Ramer J, Armour EA, Stall R, Gurary A, Galyukov A, Makarov Y Journal of Crystal Growth, 261(2-3), 175, 2004 |
| 5 |
In situ metrology advances in MOCVD growth of GaN-based materials Belousov M, Volf B, Ramer JC, Armour EA, Gurary A Journal of Crystal Growth, 272(1-4), 94, 2004 |
| 6 |
The development of resistive heating for the high temperature growth of alpha-SiC using a vertical CVD reactor Eshun E, Taylor C, Diagne NF, Griffin J, Spencer MG, Ferguson L, Gurary A, Stall R Materials Science Forum, 338-3, 157, 2000 |
| 7 |
High-Quality P-Type GaN Deposition on C-Sapphire Substrates in a Multiwafer Rotating-Disk Reactor Yuan C, Salagaj T, Gurary A, Zawadzki P, Chern CS, Kroll W, Stall RA, Li Y, Schurman M, Hwang CY, Mayo WE, Lu Y, Pearton SJ, Krishnankutty S, Kolbas RM Journal of the Electrochemical Society, 142(9), L163, 1995 |
| 8 |
Investigation of N-Type and P-Type Doping of GaN During Epitaxial-Growth in a Mass-Production Scale Multiwafer-Rotating-Disk Reactor Yuan C, Salagaj T, Gurary A, Thompson AG, Kroll W, Stall RA, Hwang CY, Schurman M, Li Y, Mayo WE, Lu Y, Krishnankutty S, Shmagin IK, Kolbas RM, Pearton SJ Journal of Vacuum Science & Technology B, 13(5), 2075, 1995 |