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| No. | Article |
|---|---|
| 1 |
Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment Kurt G, Gulseren ME, Ghobadi TGU, Ural S, Kayal OA, Ozturk M, Butun B, Kabak M, Ozbay E Solid-State Electronics, 158, 22, 2019 |