검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Electrical properties of nitrogen-doped Float-Zoned silicon annealed in a range of 200 to 900 degrees C Voronkova GI, Batunina AV, Voronkov VV, Falster R, Golovina VN, Guliaeva AS, Tiurina NB Thin Solid Films, 518(9), 2350, 2010 |
| 2 |
The sensitivity of thermal donor generation in silicon to self-interstitial sinks Voronkov VV, Voronkova GI, Batunina AV, Falster R, Golovina VN, Guliaeva AS, Tiurina NB, Milvidski MG Journal of the Electrochemical Society, 147(10), 3899, 2000 |