화학공학소재연구정보센터
검색결과 : 65건
No. Article
1 Physical properties of Ga-Fe-N system relevant for crystallization of GaN - Initial studies
Sadovyi B, Sadovyi P, Petrusha I, Dziecielewski I, Porowski S, Turkevich V, Nikolenko A, Tsykaniuk B, Strelchuk V, Grzegory I
Journal of Crystal Growth, 507, 77, 2019
2 Melting of tetrahedrally bonded semiconductors: "anomaly" of the phase diagram of GaN?
Porowski S, Sadovyi B, Karbovnyk I, Gierlotka S, Rzoska SJ, Petrusha I, Stratiichuk D, Turkevich V, Grzegory I
Journal of Crystal Growth, 505, 5, 2019
3 Preparation of a smooth GaN-Gallium solid-liquid interface
de Jong AEF, Vonk V, Ruat M, Bockowski M, Kamler G, Grzegory I, Honkimaki V, Vlieg E
Journal of Crystal Growth, 448, 70, 2016
4 Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure
Sadovyi B, Nikolenko A, Weyher JL, Grzegory I, Dziecielewski I, Sarzynski M, Strelchuk V, Tsykaniuk B, Belyaev O, Petrusha I, Turkevich V, Kapustianyk V, Albrecht M, Porowski S
Journal of Crystal Growth, 449, 35, 2016
5 HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut (TM)
Iwinska M, Amilusik M, Fijalkowski M, Sochacki T, Lucznik B, Grzanka E, Litwin-Staszewska E, Weyher JL, Nowakowska-Siwinska A, Muziol G, Skierbiszewski C, Grzegory I, Guiot E, Caulmilone R, Bockowski M
Journal of Crystal Growth, 456, 73, 2016
6 Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates
Domagala JZ, Smalc-Koziorowska J, Iwinska M, Sochacki T, Amilusik M, Lucznik B, Fijalkowski M, Kamler G, Grzegory I, Kucharski R, Zajac M, Bockowski M
Journal of Crystal Growth, 456, 80, 2016
7 Growth of HVPE-GaN on native seeds - numerical simulation based on experimental results
Lucznik B, Iwinska M, Sochacki T, Amilusik M, Fijalkowski M, Grzegory I, Bockowski M
Journal of Crystal Growth, 456, 86, 2016
8 Homoepitaxial growth of HVPE-GaN doped with Si
Iwinska M, Sochacki T, Amilusik M, Kempisty P, Lucznik B, Fijalkowski M, Litwin-Staszewska E, Smalc-Koziorowska J, Khapuridze A, Staszczak G, Grzegory I, Bockowski M
Journal of Crystal Growth, 456, 91, 2016
9 Growth mechanisms in semipolar (20(2)over-bar1) and nonpolar m plane (10(1)over-bar0) AlGaN/GaN structures grown by PAMBE under N-rich conditions (vol 377C, pg 184, 2013)
Sawicka M, Cheze C, Turski H, Smalc-Koziorowska J, Krysko M, Kret S, Remmele T, Albrecht M, Cywinski G, Grzegory I, Skierbiszewski C
Journal of Crystal Growth, 415, 176, 2015
10 HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties
Sochacki T, Bryan Z, Amilusik M, Bobea M, Fijalkowski M, Bryan I, Lucznik B, Collazo R, Weyher JL, Kucharski R, Grzegory I, Bockowski M, Sitar Z
Journal of Crystal Growth, 394, 55, 2014