검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE Turski H, Feduniewicz-Zmuda A, Sawicka M, Reszka A, Kowalski B, Krysko M, Wolny P, Smalc-Koziorowska J, Siekacz M, Muziol G, Nowakowski-Szukudlarek K, Grzanka S, Skierbiszewski C Journal of Crystal Growth, 512, 208, 2019 |
| 2 |
Comparative study of semipolar (20(2)over-bar1), nonpolar (10(1)over-bar0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy Sawicka M, Wolny P, Krysko M, Turski H, Szkudlarek K, Grzanka S, Skierbiszewski C Journal of Crystal Growth, 465, 43, 2017 |
| 3 |
Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells Czernecki R, Grzanka E, Smalc-Koziorowska J, Grzanka S, Schiavon D, Targowski G, Plesiewicz J, Prystawko P, Suski T, Perlin P, Leszczynski M Journal of Crystal Growth, 414, 38, 2015 |
| 4 |
High power nitride laser diodes grown by plasma assisted molecular beam epitaxy Muziol G, Siekacz M, Turski H, Wolny P, Grzanka S, Grzanka E, Feduniewicz-Zmuda A, Borysiuk J, Sobczak K, Domagala J, Nowakowska-Siwinska A, Makarowa I, Perlin P, Skierbiszewski C Journal of Crystal Growth, 425, 398, 2015 |
| 5 |
Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers Czernecki R, Kret S, Kempisty P, Grzanka E, Plesiewicz J, Targowski G, Grzanka S, Bilska M, Smalc-Koziorowska J, Krukowski S, Suski T, Perlin P, Leszczynski M Journal of Crystal Growth, 402, 330, 2014 |
| 6 |
Ni-Au contacts to p-type GaN - Structure and properties Smalc-Koziorowska J, Grzanka S, Litwin-Staszewska E, Piotrzkowski R, Nowak G, Leszczynski M, Perlin P, Talik E, Kozubowski J, Krukowski S Solid-State Electronics, 54(7), 701, 2010 |
| 7 |
Growth of thin AllnN/GalnN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths Cywinski G, Skierbiszewski C, Fedunieiwcz-Zmuda A, Siekacz M, Nevou L, Doyennette L, Tchernycheva M, Julien FH, Prystawko P, Krysko M, Grzanka S, Grzegory I, Presz A, Domagala JZ, Smalc J, Albrecht M, Remmele T, Porowski S Journal of Vacuum Science & Technology B, 24(3), 1505, 2006 |
| 8 |
Control of Mg doping of GaN in RF-plasma molecular beam epitaxy Feduniewicz A, Skierbiszewski C, Siekacz M, Wasilewski ZR, Sproule I, Grzanka S, Jakiela R, Borysiuk J, Kamler G, Litwin-Staszewska E, Czernecki R, Bockowski M, Porowski S Journal of Crystal Growth, 278(1-4), 443, 2005 |
| 9 |
Properties of InGaN blue laser diodes grown on bulk GaN substrates Perlin P, Suski T, Leszczynski M, Prystawko P, Swietlik T, Marona L, Wisniewski P, Czernecki R, Nowak G, Weyher JL, Kamler G, Borysiuk J, Litwin-Staszewska E, Dmowski L, Piotrzkowski R, Franssen G, Grzanka S, Grzegory I, Porowski S Journal of Crystal Growth, 281(1), 107, 2005 |