화학공학소재연구정보센터
검색결과 : 358건
No. Article
1 The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates
Yan GG, Liu XF, Shen ZW, Zhao WS, Wang L, Cui YX, Li JT, Zhang F, Sun GS, Zeng YP
Journal of Crystal Growth, 507, 175, 2019
2 Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
Yan GG, Liu XF, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Zhang XH, Li XG, Sun GS, Zeng YP, Wang ZG
Journal of Crystal Growth, 505, 1, 2019
3 Optimization of total resolved shear stress in AlN single crystals homoepitaxially grown by physical vapor transport method
Wang QK, Zhao YT, Huang JL, Fu DY, He GD, Wu L
Journal of Crystal Growth, 519, 14, 2019
4 Effect of nitrogen and aluminium on silicon carbide polytype stability
Nishizawa S, Mercier F
Journal of Crystal Growth, 518, 99, 2019
5 Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals
Nakano T, Shinagawa N, Yabu M, Ohtani N
Journal of Crystal Growth, 516, 51, 2019
6 Influence of crucible shape on mass transport in AlN crystal growth by physical vapor transport process
Wang QK, Huang JL, Fu DY, He GD, Lei D, Wu L
Journal of Crystal Growth, 515, 21, 2019
7 Structural characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals using Raman microscopy and x-ray topography
Shioura K, Shinagawa N, Izawa T, Ohtani N
Journal of Crystal Growth, 515, 58, 2019
8 Microstructure and influence of buffer layer on threading dislocations in (0001) AlN/sapphire grown by hydride vapor phase epitaxy
Su XJ, Huang J, Zhang JP, Wang JF, Xu K
Journal of Crystal Growth, 515, 72, 2019
9 Probing ice growth from vapor phase: A molecular dynamics simulation approach
Mohandesi A, Kusalik PG
Journal of Crystal Growth, 483, 156, 2018
10 In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique
Dojima D, Ashida K, Kaneko T
Journal of Crystal Growth, 483, 206, 2018