1 |
The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates Yan GG, Liu XF, Shen ZW, Zhao WS, Wang L, Cui YX, Li JT, Zhang F, Sun GS, Zeng YP Journal of Crystal Growth, 507, 175, 2019 |
2 |
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers Yan GG, Liu XF, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Zhang XH, Li XG, Sun GS, Zeng YP, Wang ZG Journal of Crystal Growth, 505, 1, 2019 |
3 |
Optimization of total resolved shear stress in AlN single crystals homoepitaxially grown by physical vapor transport method Wang QK, Zhao YT, Huang JL, Fu DY, He GD, Wu L Journal of Crystal Growth, 519, 14, 2019 |
4 |
Effect of nitrogen and aluminium on silicon carbide polytype stability Nishizawa S, Mercier F Journal of Crystal Growth, 518, 99, 2019 |
5 |
Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals Nakano T, Shinagawa N, Yabu M, Ohtani N Journal of Crystal Growth, 516, 51, 2019 |
6 |
Influence of crucible shape on mass transport in AlN crystal growth by physical vapor transport process Wang QK, Huang JL, Fu DY, He GD, Lei D, Wu L Journal of Crystal Growth, 515, 21, 2019 |
7 |
Structural characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals using Raman microscopy and x-ray topography Shioura K, Shinagawa N, Izawa T, Ohtani N Journal of Crystal Growth, 515, 58, 2019 |
8 |
Microstructure and influence of buffer layer on threading dislocations in (0001) AlN/sapphire grown by hydride vapor phase epitaxy Su XJ, Huang J, Zhang JP, Wang JF, Xu K Journal of Crystal Growth, 515, 72, 2019 |
9 |
Probing ice growth from vapor phase: A molecular dynamics simulation approach Mohandesi A, Kusalik PG Journal of Crystal Growth, 483, 156, 2018 |
10 |
In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique Dojima D, Ashida K, Kaneko T Journal of Crystal Growth, 483, 206, 2018 |