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| No. | Article |
|---|---|
| 1 |
Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy Ploch S, Park JB, Stellmach J, Schwaner T, Frentrup M, Niermann T, Wernicke T, Pristovsek M, Lehmann M, Kneissl M Journal of Crystal Growth, 331(1), 25, 2011 |