화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Ultra-shallow, super-doped and box-like junctions realized by laser-induced doping
Kerrien G, Boulmer J, Debarre D, Bouchier D, Grouillet A, Lenoble D
Applied Surface Science, 186(1-4), 45, 2002
2 0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters
Vanmackelberg M, Raynaud C, Faynot O, Pelloie JL, Tabone C, Grouillet A, Martin F, Dambrine G, Picheta L, Mackowiak E, Llinares P, Sevenhans J, Compagne E, Fletcher G, Flandre D, Dessard V, Vanhoenacker D, Raskin JP
Solid-State Electronics, 46(3), 379, 2002
3 Plasma doping for shallow junctions
Goeckner MJ, Felch SB, Fang Z, Lenoble D, Galvier J, Grouillet A, Yeap GCF, Bang D, Lin MR
Journal of Vacuum Science & Technology B, 17(5), 2290, 1999