화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Development of polarity inversion in a GaN waveguide structure for modal phase matching
Kolenda M, Kezys D, Reklaitis I, Radiunas E, Ritasalo R, Kadys A, Grinys T, Malinauskas T, Stanionyte S, Skapas M, Petruskevicius R, Tomasiunas R
Journal of Materials Science, 55(26), 12008, 2020
2 Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band
Mickevicius J, Dobrovolskas D, Aleksiejunas R, Nomeika K, Grinys T, Kadys A, Tamulaitis G
Journal of Crystal Growth, 459, 173, 2017
3 GaN growth on Si with rare-earth oxide distributed Bragg reflector structures
Grinys T, Dargis R, Kalpakovaite A, Stanionyte S, Clark A, Arkun FE, Reklaitis I, Tomasiunas R
Journal of Crystal Growth, 424, 28, 2015
4 InxGa1 _N-x performance as a band-gap-tunable photo-electrode in acidic and basic solutions
Juodkazyte J, Sebeka B, Sayickaja I, Kadys A, Jelmakas E, Grinys T, Juodkazis S, Juodkazis K, Malinauskas T
Solar Energy Materials and Solar Cells, 130, 36, 2014