검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Electrical properties of aluminum oxide films grown by atomic layer deposition on n-type 4H-SiC Avice M, Grossner U, Monakhov EV, Grillenberger J, Nilsen O, Fjellvag H, Svensson BG Materials Science Forum, 483, 705, 2005 |
| 2 |
Investigation of electronic states of Pd in 4H-SiC by means of Radiotracer-DLTS Grossner U, Grillenberger J, Albrecht F, Pasold G, Sielemann R, Svensson BG, Witthuhn W Materials Science Forum, 457-460, 791, 2004 |
| 3 |
Radiotracer spectroscopy on group II acceptors in GaN Albrecht F, Pasold G, Grillenberger J, Reislohner U, Dietrich M, Witthuhn W Materials Science Forum, 457-460, 1609, 2004 |
| 4 |
Polytype dependence of transition metal-related deep levels in 4H-, 6H-and 15R-SiC Grillenberger J, Achtziger N, Pasold G, Witthuhn W Materials Science Forum, 389-3, 573, 2002 |
| 5 |
A deep erbium-related bandgap state in 4H silicon carbide Pasold G, Albrecht F, Grillenberger J, Grossner U, Hulsen C, Sielemann R, Witthuhn W Materials Science Forum, 433-4, 487, 2002 |
| 6 |
Band gap states of Cr in the lower part of the SiC band gap Pasold G, Achtziger N, Grillenberger J, Witthuhn W Materials Science Forum, 353-356, 471, 2001 |
| 7 |
Tantalum and tungsten in silicon carbide: Identification and polytype dependence of deep levels Grillenberger J, Achtziger N, Pasold G, Sielemann R, Witthuhn W Materials Science Forum, 353-356, 475, 2001 |
| 8 |
On the existence of deep levels of the accepters Ga and In and of the potential double accepters Zn and Cd in SiC Achtziger N, Grillenberger J, Uhrmacher M, Witthuhn W Materials Science Forum, 338-3, 749, 2000 |