검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Electric-field dependence of electron drift velocity in 4H-SiC Ivanov PA, Potapov AS, Samsonova TP, Grekhov IV Solid-State Electronics, 123, 15, 2016 |
| 2 |
Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution Tyaginov SE, Vexler MI, Shulekin AF, Grekhov IV Solid-State Electronics, 49(7), 1192, 2005 |
| 3 |
Impact of oxide damage on the light emission properties of MOS tunnel structures Asli N, Shulekin AF, Yoder PD, Vexler MI, Grekhov IV, Seegebrecht P Solid-State Electronics, 48(5), 731, 2004 |
| 4 |
Impact of the band-band tunneling in silicon on electrical characteristics of Al/SiO2/P+-Si structures with the sub-3 nm oxide under positive bias El Hdiy A, Khlil R, Ziane D, Grekhov IV, Shulekin AF, Vexler MI Solid-State Electronics, 47(4), 617, 2003 |
| 5 |
Sub-nanosecond semiconductor opening switches based on 4H-SiC p(+)p(o)n(+)-diodes Grekhov IV, Ivanov PA, Khristyuk DV, Konstantinov AO, Korotkov SV, Samsonova TP Solid-State Electronics, 47(10), 1769, 2003 |
| 6 |
Reverse current recovery in 4H-SiC diodes with n- and p-base Ivanov PA, Grekhov IV, Konstantinov AO, Samsonova TP Materials Science Forum, 433-4, 855, 2002 |
| 7 |
Current model considering oxide thickness non-uniformity in a MOS tunnel structure Vexler MI, Shulekin AF, Dieker C, Zaporojtschenko V, Zimmermann H, Jager W, Grekhov IV, Seegebrecht P Solid-State Electronics, 45(1), 19, 2001 |
| 8 |
Structural Quality of Directly Bonded Silicon-Wafers with Regularly Grooved Interfaces Kim ED, Kim SC, Park JM, Grekhov IV, Argunova TS, Kostina LS, Kudryavtzeva TV Journal of the Electrochemical Society, 144(2), 622, 1997 |
| 9 |
Non-One-Dimensional Effects in Tunnel MOS Devices Belov SV, Vexler MI, Grekhov IV, Shulekin AF Thin Solid Films, 294(1-2), 281, 1997 |