검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Integration of epitaxial Pb(Zr0.52Ti0.48)O-3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers Elibol K, Nguyen MD, Hueting RJE, Gravesteijn DJ, Koster G, Rijnders G Thin Solid Films, 591, 66, 2015 |
| 2 |
Evidence of Ge island formation during thermal annealing of SiGe alloys : Combined atomic force microscopy and Auger electron spectroscopy study Tetelin C, Wallart X, Stievenard D, Nys JP, Gravesteijn DJ Journal of Vacuum Science & Technology B, 16(1), 137, 1998 |
| 3 |
Characterization of low-energy (100 eV 10 keV) boron ion implantation Collart EJH, Weemers K, Gravesteijn DJ, van Berkum JGM Journal of Vacuum Science & Technology B, 16(1), 280, 1998 |
| 4 |
Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants : Problems and solutions van Berkum JGM, Collart EJH, Weemers K, Gravesteijn DJ, Iltgen K, Benninghoven A, Niehuis E Journal of Vacuum Science & Technology B, 16(1), 298, 1998 |
| 5 |
Diffusion and Electrical-Properties of Boron and Arsenic Doped Poly-Si and Poly-Gexsi1-X (X-Similar-to-0.3) as Gate Material for Sub-0.25 Mu-M Complementary Metal-Oxide-Semiconductor Applications Salm C, Vanveen DT, Gravesteijn DJ, Holleman J, Woerlee PH Journal of the Electrochemical Society, 144(10), 3665, 1997 |
| 6 |
Defect-Free Strain Relaxation in Locally MBE-Grown SiGe Heterostructures Rupp T, Kaesen F, Hansch W, Hammerl E, Gravesteijn DJ, Schorer R, Silveira E, Abstreiter G, Eisele I Thin Solid Films, 294(1-2), 27, 1997 |
| 7 |
Voids in Epitaxial Silicon Films Grown Under Different Thermal Conditions - Void Detection by Thermal Helium Desorption Vanveen A, Reader AH, Gravesteijn DJ, Vangorkum AA Thin Solid Films, 241(1-2), 206, 1994 |
| 8 |
SILICON MOLECULAR-BEAM EPITAXY GRAVESTEIJN DJ, VANDEWALLE GFA, VANGORKUM AA Advanced Materials, 3(7-8), 351, 1991 |