검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
The prospects of transition metal dichalcogenides for ultimately scaled CMOS Thiele S, Kinberger W, Granzner R, Fiori G, Schwierz F Solid-State Electronics, 143, 2, 2018 |
| 2 |
Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling Racko J, Benko P, Mikolasek M, Granzner R, Kittler M, Schwierz F, Harmatha L, Breza J Applied Surface Science, 395, 122, 2017 |
| 3 |
A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times Racko J, Benko P, Hotovy I, Harmatha L, Mikolasek M, Granzner R, Kittler M, Schwierz F, Breza J Applied Surface Science, 312, 68, 2014 |
| 4 |
Subthreshold behavior of triple-gate MOSFETs on SOI material Lemme MC, Mollenhauer T, Henschel W, Wahlbrink T, Baus M, Winkler O, Granzner R, Schwierz F, Spangenberg B, Kurz H Solid-State Electronics, 48(4), 529, 2004 |
| 5 |
Simulation and optimization of EJ-MOSFETs Kittler M, Granzner R, Schwierz F, Henschel W, Wahlbrink T, Kurz H Solid-State Electronics, 47(7), 1193, 2003 |